Defence Electronics Hits the Compound Layer: DRDO's GaN Push for Radar and EW

DRDO has developed indigenous gallium nitride (GaN) technology for next-generation radar and electronic warfare, built on silicon-carbide wafer processes at the Solid State Physics Laboratory. Reporting cites a single 3.5 x 3 mm GaN chip delivering up to 30 W — compound semiconductors, not logic fabs, are where several defence import dependencies actually sit.